直流热阴极PCVD法间歇生长模式制备金刚石膜

Intermittent growth of a diamond film by direct current hot cathode plasma chemical vapor deposition

采用直流热阴极PCVD(Plasma chemical vapor deposition)法间歇生长模式制备金刚石膜,通过加入周期性的刻蚀阶段清除金刚石膜在一定生长期中形成的石墨和非晶碳等杂质,实现了金刚石膜生长的质量调控。间歇式生长过程分为沉积阶段和刻蚀阶段,两个阶段交替进行。采用Raman光谱、SEM和XRD对所制金刚石膜的品质进行了表征,并与同样生长条件下连续生长模式制备的金刚石膜样品进行了比较。结果表明,当单个生长周期为30 min(沉积时间为20 min、刻蚀时间为10 min)时,直流热阴极PCVD法间歇生长模式制备的金刚石膜中的非金刚石相杂质含量低于连续间歇生长模式制备的金刚石膜。

A diamond film was intermittently prepared by direct-current（DC） hot-cathode plasma chemical vapor deposition（PCVD）.The intermittent growth was carried out by alternating deposition under methane flow for 20 min and etching for 10 min without methane flow.For comparison,a diamond film was continuously prepared under the same growth conditions without etching.Scanning electron microscopy,Raman spectroscopy and XRD were used to characterize surface morphology,texture and purity of the two diamond films.Results indicated that the diamond film produced by the intermittent growth had smaller amounts of non-diamond phase and its grains were more uniform than that produced by the continuous growth without etching.Amorphous carbon and graphite formed during deposition on the surface of the diamond film can be reduced by etching.