摘要
A multi-quantum barrier structure is employed as the electron blocking layer of light-emitting diodes to enhance their performance.Using the non-isothermal multi-physics-field coupling model,the internal quantum efficiency,internal heat source characteristics,spectrum characteristics,and photoelectric conversion efficiency of light-emitting diodes are analyzed systematically.The simulation results show that:introducing multi-quantum barrier electron blocking layer structure significantly increases the internal quantum efficiency and photoelectric conversion efficiency of light-emitting diodes and the intensity of spectrum,and strongly ensures the thermal and light output stability of light-emitting diodes.These results are attributed to the modified energy band diagrams of the electron blocking layer which are responsible for the decreased electron leakage and enhanced carrier concentration in the active region.
A multi-quantum barrier structure is employed as the electron blocking layer of light-emitting diodes to enhance their perfor- mance. Using the non-isothermal multi-physics-field coupling model, the internal quantum efficiency, internal heat source char- acteristics, spectrum characteristics, and photoelectric conversion efficiency of light-emitting diodes are analyzed systematically. The simulation results show that： introducing multi-quantum barrier electron blocking layer structure significantly increases the internal quantum efficiency and photoelectric conversion efficiency of light-emitting diodes and the intensity of spectrum, and strongly ensures the thermal and light output stability of light-emitting diodes. These results are attributed to the modified energy band diagrams of the electron blocking layer which are responsible for the decreased electron leakage and enhanced carrier con- centration in the active region.
基金
supported by the National Natural Science Foundation of China (U1034004 and 50825603)
the National Basic Research Program of China (2011CB710703)
the Fundamental Research Funds for the Central University (11ZG01)
关键词
发光二极管
势垒结构
耦合模型
非等温
多量子
性能
多重
光电转换效率
light-emitting diodes, internal quantum efficiency, multi-quantum barrier, spectrum intensity, electron leakage
