Bi_2O_3和Sb_2O_3的预复合对ZnO压敏电阻性能的影响

Effects of pre-compounding of Bi_2O_3 and Sb_2O_3 on the properties of ZnO varistor

采用固相法对Bi2O3和Sb2O3进行了预复合,并研究了不同比例的Bi2O3与Sb2O3预复合对ZnO压敏电阻致密度,晶粒结构和电学性能的影响。结果表明:当Bi2O3与Sb2O3的摩尔比为0.7:1.0时,ZnO压敏电阻的综合性能最优,其晶粒生长得最为均匀致密,电位梯度达到361V/mm,非线性系数为86,漏电流密度为7×10–8A/cm2;另外,在耐受5kA电流下的8/20μs脉冲电流波后,其残压比和压敏电压变化率分别为2.6和2.5%。

Bi2O3/Sb2O3 composites with different compositions were prepared for ZnO varistor preparation by the solid-state reaction method, and the effects of Bi2O3/Sb2O3 composites on the density, grain structure and electrical properties of ZnO varistors were studied. The results indicate that： when the mole ratio of Bi2O3 and Sb2O3 is 0.7：1.0, the prepared ZnO varistor shows the best performance. This varistor shows the most dense structure, a potential gradient of 361 V/mm, a nonlinear coefficient of 86 and a leakage current density of 7× 10^4 A/cm^2. In addition, the residual voltage ratio and breakdown voltage variation of the varistor are 2.6 and 2.5% respectively after exposure to the 8/20 μs pulses at a current of 5 kA.