期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

基于MESFET非线性模型的MOSFET DC建模技术 被引量：5

MOSFET DC Modeling Technique Based on Nonlinear MESFET Models
下载PDF
导出
摘要 常用的MOSFET模型模型参数多且复杂,在保证精确度的基础上应尽量简化模型。尝试采用目前比较成熟通用的MESFET非线性等效电路经验模型表征射频MOSFET的直流特性。进行模型参数提取,从模型对MOSFET的DC仿真与测量曲线数据的对比结果,以及采用这6个模型仿真MOSFET直流特性时的RMS误差结果来看,这6个常用的MESFET非线性模型可以表征MOSFET的直流特性,参数越多模型精度越高。 Most of the popular MOSFET models have many complex parameters.Several popular nonlinear MESFET models are used to characterize the DC behavior of MOSFET.Parameters are extracted and conclusions can be drawn from the comparison between the simulated and measured MOSFET I-V curves and the 6 models ’ RMS errors that these 6 nonlinear MESFET models can be used to characterize the DC behavior of MOSFET.The more the parameters,the higher accuracy the model.
作者 孟茜倩 程加力 高建军
机构地区 华东师范大学信息科学技术学院
出处 《电子器件》 CAS 北大核心 2012年第3期263-266,共4页 Chinese Journal of Electron Devices
关键词 CMOS器件 MOSFET模型 参数提取与模型仿真 MESFET模型 直流模型 CMOS device MOSFET model parameter extraction and model simulation MESFET model DC model
分类号 TN386 [电子电信—物理电子学]
  • 相关文献

参考文献17

  • 1Cheng Y H, Deen M J, Chen C H. MOSFET Modeling for RF IC Design[ J]. IEEE Transactions on Electron Devices ,2005,52 (7) : 1286-1303.
  • 2程加力,韩波,李寿林,翟国华,高建军.基于GaAs STATZ模型的RF MOSFET DC建模技术[J].半导体技术,2011,36(8):591-594. 被引量：2
  • 3Statz H, Newman P, Smith IRL W, et al. GaAs FET Device and Circuit Simulation in SPICE. [ J ] IEEE Trans. ED, 1987,34 ( 2 ) : 160-169.
  • 4Hallgren R B,Litzenberg P H. TOM3 Capacitance Model:Linking- Large and Small-Signal MESFET Models in SPICE [ J ]. IEEE Transations on Microwave Theory and Techniques, 1999,47 (5) : 556-561.
  • 5Curtice W R. A MESFET Model for Use in the Desigh of GaAs Integrated Circuits [ J ]. IEEE Transactions on Microwave Theoryand Techniques, 1980,28 ( 5 ) :448-456.
  • 6Tajima Y, Wrona B, Mihima K. GaAs FET Large Signal Model and Its Application to Circuit Desigh [ J ]. IEEE Transaction on ED, 1981,28 : 171-175.
  • 7Kacprzak T, Materka A. Compact dc Model GaAs FET for Large Signal Computer Calculation [ J ]. IEEE Journal of Solid State Circuits, 1983,18 (2) :211-213.
  • 8Angelov L, Rorsman N, Stenarson J, et al. An Empirical Table- Based FET Model [ J ]. IEEE Transactions on Microwave Theory and Techniques, 1999,47 ( 12 ) : 2350 -2357.
  • 9Angelov L, Bengtsson L, Garcia M. Extensions of the Chalmers Non-Linear HEMT and MESFET Model. [ J] IEEE Transactions on Microwave Theory and Techniques, 1996,44 ( 10 ) : 1664-1647.
  • 10Angelov L, Zirath H, Rosman N. A New Empirical Nonlinear Model for HEMT and MESFET Devices [ J ]. IEEE Transactions on Microwave Theory and Techniques, 1992,40(12) :2258-2266.

二级参考文献7

  • 1CHENG Y H, DEEN M J, CHEN C H. MOSFET modeling for RF IC design [J]. IEEE Transactions on Electron Devices, 2005, 52 (7) : 1286 - 1303.
  • 2CHENG Y, CHAN M, HUI K, et al. BSIM3v3 manual [M]. USA: Electronics Research Laboratory, UC Berkeley, 1995.
  • 3XI X, DUNGA M, HE J, et al. BSIM4. 3.0 MOSFET model user's manual [ M]. USA: Electronics Research Laboratory, UC Berkeley, 2003.
  • 4STATZ H, NEWMAN P, SMITH I, et al. GaAs FET device and circuit simulation in SPICE [J]. IEEE Transactions on Electron Devices, 1987, 34 (2): 160 - 169.
  • 5LEE S, YU H K, KIM C S, et al. A novel approach to extracting small-signal model parameters of silicon MOSFETS [J].IEEE Microwave Guided Wave Letters, 1997, 7 (3): 75-77.
  • 6REYDEZEL T, ROBERTO M A. Straightforward determination of small-signal model parameters for bulkRF-MOSFETs [C] // Proceedings of the 5th IEEE International Caracas Conference on Devices, Circuitsand Systems. Caracas, Dominican Republic, 2004: 14 - 18.
  • 7伍青青,陈静,罗杰馨,肖德元,王曦.MOSFET集约模型的发展[J].固体电子学研究与进展,2010,30(2):192-198. 被引量：2

共引文献1

同被引文献27

  • 1黄淮,吴郁,亢宝位.降低功率MOSFET导通电阻R_(ON)的研究进展[J].电力电子,2007,5(4):13-18. 被引量：4
  • 2刘平,宋慧娜,刘晓芳,曾波.MOSFET输出电容的非线性对振荡谐波的影响[J].微计算机信息,2007,23(32):283-285. 被引量：5
  • 3Kenneth H.K.Yau,Eric Dacquay,Ioannis Sarkas,et al.,Device and IC Characterization above 100GHz[J].Microwave Magazine,IEEE,vol.13,pp.30-54,2012.
  • 4G.Crupi and D.Schreurs,Microwave De-embedding:From Theory to Applications[M].Academic Press,2013.
  • 5Scott A.Wartenberg.RF Measurement of Die and Packages[M].Artech House Press,2002.
  • 6P. Heymann et al. Experimental Evaluation of Microwave Field Effect Transistor Noise Models. IEEE Trans. Microwave Theory Tech., 1999, 47(2).
  • 7H. Fukui. Determination of the Basic Device Parameters of a GaAs MESFET. Bell System Technical Journal, 1979,58 (3).
  • 8M. Berroth and R. Bosch. Broad - Band Determination of the FET Small - Signal Equivalent Circuit. IEEE Trans. Microwave Theory Tech. , 1990, 38, (7).
  • 9K. W. Lee et al. Source, Drain, and Gate Series Resistances and E- lectron Saturation Velocity in Ion-Implanted GaAs FET' s. 1EEE Trans. On Electron Devices. 1985, ED-32 (5).
  • 10武超,张刚.FET宽带小信号等效电路的研究[J].现代电子技术,2008,31(17):168-170. 被引量：1

引证文献5

二级引证文献3

电子器件
2012年 第3期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部