柔性PET衬底上低温制备TZO透明导电薄膜

Deposition and Characterization of Ti-Doped ZnO Films on Flexible Polyethylene Terephthalate Substrate

利用直流磁控溅射法,在室温水冷柔性PET衬底上成功制备出了掺钛氧化锌透明导电薄膜(TZO)。通过X射线衍射和扫描电镜等表征方法对薄膜结构和特性进行测试分析,研究了靶与衬底之间的距离(靶基距)对TZO薄膜表面形貌、结构、力学、电学和光学性能的影响。结果表明,实验制备的柔性TZO透明导电薄膜为具有c轴择优取向的六角纤锌矿结构的多晶薄膜;靶基距对PET衬底上的柔性TZO薄膜的性能有较大的影响。随着靶基距从42 mm增大到70 mm,薄膜的生长速率由22.46 nm/min降低到6.92 nm/min;薄膜的电阻率先由55.99×10-4Ω.cm快速减小到5.34×10-4Ω.cm后略有增大并趋稳,5.34×10-4Ω.cm为最小电阻率,其靶基距为52 mm;70 mm靶基距时样品薄膜应力最小,为0.4914 GPa;所有样品的可见光区平均透过率都高于90.97%。

The Ti-doped ZnO（TZO） films were deposited by DC magnetron sputtering at room temperature on flexible polyethylene terephthalate substrate cooled by running water.The impacts of the deposition conditions were evaluated.The microstructures and properties of the TZO films were characterized with X-ray diffraction and scanning electron microscopy.The results show that the polycrystalline TZO films consist of hexagonal wurtzite structured grains with c-axis preferred growth orientation,and that the target-substrate separation strongly affects the deposition rate and properties of the films.For example,as the distance increased from 42 mm to 70 mm,the deposition rate decreased from 22.46 nm/min to 6.92 nm/min,and its resistivity rapidly decreased from 55.99×10^-4 Ω·cm to 5.34×10^-4 Ω·cm,then slightly leveled off.At the optimized distance of 52 mm,the lowest resistivity was found to be 5.34×10^-4 Ω·cm.At 70 mm,the lowest stress was 0.4914 GPa.The transmittance of all TZO films was measured to be over 90.97% in the visible range.