摘要
The characteristic degradations in silicon NPN bipolar junction transistors（BJTs） of type 3DD155 are examined under the irradiations of 25-MeV carbon（C）,40-MeV silicon（Si）,and 40-MeV chlorine（Cl） ions respectively.Different electrical parameters are measured in-situ during the exposure of heavy ions.The experimental data shows that the changes in the reciprocal of the gain variation（（1/β）） of 3DD155 transistors irradiated respectively by 25-MeV C,40-MeV Si,and 40-MeV Cl ions each present a nonlinear behaviour at a low fluence and a linear response at a high fluence.The（1/β） of 3DD155 BJT irradiated by 25-MeV C ions is greatest at a given fluence,a little smaller when the device is irradiated by 40-MeV Si ions,and smallest in the case of the 40-MeV Cl ions irradiation.The measured and calculated results clearly show that the range of heavy ions in the base region of BJT affects the level of radiation damage.
The characteristic degradations in silicon NPN bipolar junction transistors（BJTs） of type 3DD155 are examined under the irradiations of 25-MeV carbon（C）,40-MeV silicon（Si）,and 40-MeV chlorine（Cl） ions respectively.Different electrical parameters are measured in-situ during the exposure of heavy ions.The experimental data shows that the changes in the reciprocal of the gain variation（（1/β）） of 3DD155 transistors irradiated respectively by 25-MeV C,40-MeV Si,and 40-MeV Cl ions each present a nonlinear behaviour at a low fluence and a linear response at a high fluence.The（1/β） of 3DD155 BJT irradiated by 25-MeV C ions is greatest at a given fluence,a little smaller when the device is irradiated by 40-MeV Si ions,and smallest in the case of the 40-MeV Cl ions irradiation.The measured and calculated results clearly show that the range of heavy ions in the base region of BJT affects the level of radiation damage.
基金
Project supported by the Fundamental Research Funds for the Central Universities (Grant No. HIT.KLOF.2010003)
the National Basis Research Program of China (Grant No. 51320)
