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相变随机存储器存储材料及关键技术 被引量:1

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摘要 半导体存储器是半导体产业的重要组成部分,近几年来随着消费电子市场的快速增长,存储器的市场越来越大。我国由于人口众多以及半导体业的飞速发展,在2005年成为全球消耗IC最大的市场,
出处 《中国科技成果》 2012年第19期16-17,共2页 China Science and Technology Achievements
基金 国家863计划课题(2008AA031402).
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  • 1OVSHINSKY S R.Reversible electrical switching phenomena in disordered structures[J].Physical Review Letters,1968,21(20):1450-1453.
  • 2WONG H S P,RAOUX S,KIM S B,et al.Phase change memory[J].Proceedings of the IEEE,2010,98(12):2201-2227.
  • 3FEINLEIB J,DENEUFVILLE J,MOSS S C,et al.Rapid reversible light-induced crystallization of amorphous semiconductors[J].APL,1971,18(6):254-257.
  • 4NEALE R G,NELSON D L,MOORE G E.Amorphous semiconductors part I:nonvolatile and reprogramable,the read-mostly memory is here[J].Electronics,1970,43(20):56-60.
  • 5MOHAMMAD M G,TERKAWI L,ALBASMAN M.Phase change memory faults[C]//Proceedings of the 19th International Conference on VLSI Design,Held Jointly with 5th International Conference on Embedded Systems and Design.Hyderabad,India,2006:108-112.
  • 6MAIMON J,HUNT K,RODGERS J,et al.Results of radiation effects on a chalcogenide non-volatile memory array[C]//Proceedings of IEEE Aerospace Conference.Big sky,Montana,USA,2004,4:2306-2315.
  • 7MAIMON J,SPALL E,QUINN R,et al.Chalcogenidebased non-volatile memory technology[C]//Proceedings of IEEE Aerospace Conference.Big sky,Montana,USA,2001,5:2289-2294.
  • 8YU B,JU S,SUN X,et al.Indium selenide nanowire phasechange memory[J].Applied Physics Letters,2007,91(13):133119-1-133119-3.
  • 9XIONG F,BAE M H,DAI Y,et al.Self-aligned nanotubenanowire phase change memory[J].Nano Letters,2013,13(2):464-469.
  • 10QI P,JAVEY A,ROLANDI M,et al.Miniature organic transistors with carbon nanotubes as quasi-one-dimensional electrodes[J].Journal of the American Chemical Society,2004,126(38):11774-11775.

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