石墨烯纳米带p-n结的电子输运特性

Electronic Transport Properties of Graphene P-N Junctions

本文研究了石墨烯纳米带p-n结的电导特性。当费米面处于p-n结的能量中点时电导达到最大值,费米面从该点移到p区或n区的中性点的过程中,电导呈台阶状不断减小。这些台阶是由于费米面扫过p区或n区横向模式本征能量造成的。当费米面每扫过一个横向本征能量时,电导就减小一个台阶。每个台阶的高度由量子隧穿的强度决定,并与p-n结势的斜率有关。这对石墨烯纳米电路的实用化方面有潜在的应用。

We investigate the conductance of graphene p-n junctions in the bipolar region.The conductance reaches its maximum when Fermi energy aligning at the middle of the potentials of p-and n-areas.When the Fermi energy changes,the conductance decreases stepwise.These steps are induced by the Fermi energy sweeping through the lateral eigen energies.The step heights are determined by the profile of p-n potential.Our result could be valuable for the application of graphene electronics.