摘要
用醋酸铅、硒粉及亚硫酸硒钠为主要原料采用化学液相沉积的方法在玻璃衬底上制备出了一系列的硒化铅半导体薄膜材料,采用在有氧环境下对薄膜进行热处理来实现薄膜的敏化过程,用SEM、XRD、EDS和IR等分析手段对薄膜的形貌、结构以及性能进行了表征。当敏化温度低于375℃时薄膜晶粒尺寸变化不大,但表面O/(Se+Pb)原子比随敏化温度的升高而明显升高,同时薄膜结构有所变化。硒化铅薄膜经过敏化处理后具有了一定的光电特性,在光照条件下薄膜的电阻变化率在5%～10%左右。
PbSe films were deposited on glass substrates by chemical liquid deposition using the Pb （Ac） 2 solution, Se powder and Na2SO3 solution as the reactants. Heat treatment was carried out in an O2 atmosphere to promote the photoelectric response. The morphology, microstructure and photoelectric properties of PbSe thin films annealed at different temperature were investigated by SEM, XRD, EDS and IR. The morphologies before and after sensitization had no significant change under 375℃, but the O/（Se＋Pb） atom ratio increased with the rise of temperature. XRD showed the reflection peak of PbO in the films after heat treatment. After photosensitization processing, resistance change ratio of PbSe films increased to 5% ~ 10%.
出处
《机电工程技术》
2012年第9期71-74,共4页
Mechanical & Electrical Engineering Technology
关键词
硒化铅薄膜
敏化
光电性能
PbSe film
photosensitization process
photoelectric properties
