直流反应磁控溅射预制ZnO晶种层工艺参数优化

Parametric optimization of processes of ZnO seed-layer prefabricated by DC reactive magnetron sputtering

采用直流反应磁控溅射法,在不同O2/Ar分压比(1∶3、1∶4),不同溅射功率密度(24、40、48W/cm2)及不同热处理温度(400、800℃)条件下制备出ZnO晶种层,研究O2/Ar分压比、溅射功率及热处理的最佳工艺,对制备的晶种层微观形貌和结构进行SEM、AFM、XRD表征,分析磁控溅射相关工艺参数对预制ZnO晶种层的影响机理,发现在O2/Ar分压比为1∶4,溅射功率密度为40W/cm2及800℃热处理条件下制备的ZnO晶种层质量最优.

The ZnO seed-layer was prepared by DC reactive magnetron sputtering with different partial pressure ratio of O2 to Ar （1 ： 3, 1 ： 4）, sputtering power density （24, 40, 48 W/cm2）, and annealing conditions （400, 800 ℃）. The optimal processing parameters of partial pressure ratio of O2 to Ar, sputte- ring power density and annealing conditions were investigated. The morphology and structure of ZnO seed- layer were characterized by SEM, AFM and XRD. The mechanism of influence of relevant process param- eters on ZnO seed-layer was analyzed. It was found that the best quality of ZnO seed-layer would be ob- tained with 1 ： 4, 40 W/cm2, and 800 ℃ of the O2-to-Ar ratio, sputtering power density, and annealing temperature, respectively.