不同稀土氧化物添加对氧化锌压敏电阻瓷性能的影响

Different rare earth oxides addition on zinc oxide varistor ceramic properties

分别采用La2O3、Sm2O3、CeO2、Y2O3掺杂改性氧化锌压敏电阻,研究了不同稀土氧化物对氧化锌压敏电阻微观结构和电性能的影响。结果表明,在摩尔比例相同的情况下,并在烧结温度为1160℃左右烧结成瓷,制备的氧化锌压敏电阻陶瓷具有不同的电性能,其中以Y2O3掺杂改性的阀片性能最佳,其电位梯度达到348v/mm,漏电流为2μA,非线性系数为39,能量吸收密度为284J/cm3,性能优于其他稀土氧化物掺杂改性,更优于传统阀片。

Using the La2O3,Sm2O3,CeO2,Y2O3 modified by doped zinc oxide varistor,Study of different rare earth oxide on zinc oxide varistor microstructure and electric properties of impact..The results show that,in the case of the same molar ratio,and the sintering temperature of 1160℃ sintering ceramic,preparing zinc oxide varistor ceramic with different electrical properties,of which Y2O3 doped and modified valve performance best,its potential gradient reaches 339v/mm,the leakage current of 2μA,nonlinear coefficient as of 39,absorbed energy density is 284J/cm3,performance is superior to other rare earth oxide doped and modified,more than the traditional valve.