超微OLED的制备及其光电特性的研究

Fabrication of tiny-size OLED and its optical and electrical properties

为了实现高亮度有机电致发光器件(OLED)及其尺寸的微型化,采用接触式光刻技术,通过真空热蒸镀制备了具有不同掩膜版结构的OLED。器件的结构为玻璃衬底/ITO/LiF/空穴传输层(HTL,NPD)/发光层(EML,0.5-0.6vol%Rubrene:Alq3)/电子传输层(ETL,Alq3)/阴极,其中LiF作为绝缘层。分别制得发光面积为45μm×2mm的微细器件和直径为44μm的微小器件。实验研究了其光电特性,结果表明,4.5μm×2.0mm微细器件的最大电流密度为7A/cm2,为44μm微小器件的最大电流密度为40A/cm2。

In order to achieve high-luminance and tiny-size organic light-emitting diode（OLED）,contact photolithography and vacuum thermal evaporation are adopted to fabricate OLEDs with different ITO masks：glass/ITO/LiF/hole transport layer（HTL,NPD）/light-emitting layer（EML,0.5-0.6 vol%Rubrene：Alq3）/electron transport layer（ETL,Alq3）/cathode,in which LiF is used as the insulating layer.We obtain a microfine device with a light-emitting area of 45 μm×2 mm and a tiny device with a diameter of 44 μm,which exhibit the maximum current density of 7 A/cm2 and 40 A/cm2,respectively.