重掺<100>硅单晶抛光片条纹状起伏缺陷研究

Research of Striped Rolling Defects on Heavily Doped <100> Polished Silicon Wafers

重掺<100>硅单晶片抛光后经微分干涉显微镜观测,抛光片边缘区域存在条纹状起伏缺陷。通过分析条纹状起伏缺陷与重掺硅单晶中杂质的分布状况和<100>晶面本身腐蚀特性的关系,阐述了条纹状起伏缺陷形成的机理。通过工艺试验,对比了不同工艺条件下抛光片表面微观形貌状况,分析了抛光过程中各工艺条件对表面条纹起伏缺陷的影响,采用3步抛光工艺,得到了表面平整和一致性好的抛光片表面,抛光片边缘无条纹起伏缺陷。

Using differential interference contrast microscope observed striped rolling defects on the edge regions of Heavily doped 〈 100 〉 polished silicon wafers. Expounded the formation mechanism of the stripe rolling defects by analyzing the relationship between stripe rolling defects and the impurities distribution in heavily doped silicon crystal and the surface corrosion characteristics of 〈 100 〉 crystal orientation. Compared the surface microtopography with different polishing process conditions, researched the influence of polishing process conditions on surface striped rolling defects. Got polished silicon wafers with highly smooth surface, good consistency and no edge stripe rolling defects using three steps polishing process,.