超声注射喷雾热分解法制备CdSe薄膜及其性能的研究

A Study of the Preparation of CdSe Semiconductor films by Ultrasonic Injection Spray Pyrolysis and its Physical Properties

以CdCl2.2.5H2O为镉源,Na2SeSO3为硒源,柠檬酸钠为络合剂,采用超声注射喷雾热分解法制备了CdSe薄膜。并用XRD、UV-Vis、AFM等方法对其进行了表征。结果表明,所制备的薄膜为n型半导体,在可见光区有较高的吸收,可以获得较好的光电流。应用超声注射喷雾热分解法制备CdSe薄膜的优化条件为:基板温度为300℃,络合剂比例为1∶2,酸度为9,喷雾速度为0.3mL/min,退火温度为350℃。新的制备薄膜装置采用注射超声雾化手段,克服其雾化不均问题。

Ultrasonic injection spray pyrolysis is involved to synthesize CdSe films, with CdCl2 · 2.5H2O and Na2SeSO3 as precursors, and trisodium citrate as complexing agent. The films are characterized by XRD, AFM, UV-Vis. The results showed that the CdSe films were n-type semiconductor, having some of the absorption in the visible region. The CdSe film electrode had high photoelectron transfer rate, which leads to a substantial improvement on the photocurrent. The optimal conditions for preparing the CdSe thin films were that the substrate temperature was 300, the proportion of the Cd^2＋ and trisodium citrate was 1： 2, the PH value was 9, the Spray rate was 0.3ml/min, the annealing temperature was 350 ℃. The preparation of thin-film devices, using a new injection of ultrasonic spray method, can overcome the problem of uneven spray.