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晶片干燥技术综述 被引量:3

The Review of Wafer Drying Technology
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摘要 在各类晶片中,尤以衬底抛光片的干燥最为困难,容易出现颗粒和水痕等缺陷。以设备为依托的干燥技术发展迅速,离心甩干技术,IPA Vapor干燥,Marangoni干燥和HF/O3干燥是其中较为成功的。 Along with the increasing demand of semiconductor device technology on the chip quality,the focus of cleaning process had changed to be drying technology.The drying of bare plolished wafer was the most difficult,with the higher proportion of particle and watermark.Drying technology is dependent on the device.The Spin-Rinse-Dryer,IPA Vapor Dry,Marangoni dry and 和 HF/O3 dry were successful technology.
作者 张伟才 宋晶
出处 《电子工业专用设备》 2012年第9期8-10,共3页 Equipment for Electronic Products Manufacturing
关键词 干燥 离心甩干 IPA干燥 干燥缺陷 Dry Spin dry IPA dry Dry defect
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参考文献2

  • 1齐旭东,熊诚雷,史舸,等.关于抛光片清洗和IPA干燥技术的研究[C],2004年材料科学与工程新进展,2004年中国材料研讨会,2004:92-95.
  • 2闫志瑞,李俊峰,刘红艳,张静,李莉.HF/O_3在300mm硅片清洗中的应用[J].半导体技术,2006,31(2):108-111. 被引量:10

二级参考文献8

  • 1KERN W, PUOTINEN D A. RCA cleaning[J]. RCA Rev, 1970, 31:187.
  • 2HEYNS.M, MERTENS P W, RUZYLLO J, et al.Advanced wet and dry cleaning coming together for next generation[J].Solid State Technol, 1999,42: 37.
  • 3MORITA H, IDA J I. Advanced UCT Cleaning process based on specific gases dissolved ultra-pure water[A].IEEE Int Symp on Semiconductor Manufacturing[C].San Francisco, CA, 1999, 453.
  • 4NELSON S. Using An ozone water last cleaning process to research the effect of process parameters on wafer contamination[A]. Proc of the Semiconductor Pure Water and Chemicals Conf[C]. Santa Clara, CA,1996, 230-242.
  • 5PARK J G,HAN J H. The behavior of ozone in wet cleaning chemical: Cleaning technology in semiconductor device manufacturing[J]. Electrochem.Soc.Proc, 1998, 197(35): 231.
  • 6RENA SONDERMASCHINEN GMBH.Benefits of HF/O3 application in wafer cleaning and drying[Z].
  • 7HATTORI T, OSAKA T, OKAMOTO A, et al. Contamination removal by single-wafer spin cleaning with repetitive use of ozonized water and dilute HF[J]. J. Electrochem. Soc, 1996, 145(9): 3278.
  • 8曹宝成,于新好,马瑾,马洪磊,刘忠立.用含表面活性剂和螯合剂的清洗液清洗硅片的研究[J].Journal of Semiconductors,2001,22(9):1226-1229. 被引量:16

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