摘要
An SOI LDMOS with a compound buried layer（CBL） was proposed.The CBL consists of an upper buried oxide layer（UBOX） with a Si window and two oxide steps,a polysilicon layer and a lower buried oxide layer （LBOX）.In the blocking state,the electric field strengths in the UBOX and LBOX are increased from 88 V/μm of the buried oxide（BOX） in a conventional SOI（C-SOI） LDMOS to 163 V/μm and 460 V/μm by the holes located on the top interfaces of the UBOX and LBOX,respectively.Compared with the C-SOI LDMOS,the CBL LDMOS increases the breakdown voltage from 477 to 847 V,and lowers the maximal temperature by 6 K.
An SOI LDMOS with a compound buried layer（CBL） was proposed.The CBL consists of an upper buried oxide layer（UBOX） with a Si window and two oxide steps,a polysilicon layer and a lower buried oxide layer （LBOX）.In the blocking state,the electric field strengths in the UBOX and LBOX are increased from 88 V/μm of the buried oxide（BOX） in a conventional SOI（C-SOI） LDMOS to 163 V/μm and 460 V/μm by the holes located on the top interfaces of the UBOX and LBOX,respectively.Compared with the C-SOI LDMOS,the CBL LDMOS increases the breakdown voltage from 477 to 847 V,and lowers the maximal temperature by 6 K.
基金
supported by the National Natural Science Foundation of China(Nos.61176069,60976060)
the National Key Laboratory of Analogue Integrated Circuit,China(No.9140C090304110C0905)
