摘要
A two-stage 2.5-5 GHz monolithic low-noise amplifier（LNA） has been fabricated using 0.5-μm enhanced mode AlGaAs/GaAs pHEMT technology.To achieve wide operation bandwidth and low noise figure,the proposed LNA uses a wideband matching network and a negative feedback technique.Measured results from 2.5 to 5 GHz demonstrate a minimum of 2.4-dB noise figure and 17-dB gain.The input and output return loss exceeded -10-dB across the band.The power consumption of this LNA is 33 mW.According to the author＇s knowledge,this is the lowest power consumption LNA fabricated in 0.5-μm AlGaAs/GaAs pHEMT with the comparable performance.
A two-stage 2.5-5 GHz monolithic low-noise amplifier（LNA） has been fabricated using 0.5-μm enhanced mode AlGaAs/GaAs pHEMT technology.To achieve wide operation bandwidth and low noise figure,the proposed LNA uses a wideband matching network and a negative feedback technique.Measured results from 2.5 to 5 GHz demonstrate a minimum of 2.4-dB noise figure and 17-dB gain.The input and output return loss exceeded -10-dB across the band.The power consumption of this LNA is 33 mW.According to the author＇s knowledge,this is the lowest power consumption LNA fabricated in 0.5-μm AlGaAs/GaAs pHEMT with the comparable performance.
基金
supported by the National Natural Science Foundation of China(No.60971058)
the Natural Science Foundation of Zhejiang Province,China(No.R107481)
