摘要
The influences of the polishing slurry composition,such as the pH value,the abrasive size and its concentration,the dispersant and the oxidants,the rotational velocity of the polishing platen and the carrier and the polishing pressure,on the material removal rate of SiC crystal substrate（0001） Si and a（0001） C surface have been studied based on the alumina abrasive in chemical mechanical polishing（CMP）.The results proposed by our research here will provide a reference for developing the slurry,optimizing the process parameters,and investigating the material removal mechanism in the CMP of SiC crystal substrate.
The influences of the polishing slurry composition,such as the pH value,the abrasive size and its concentration,the dispersant and the oxidants,the rotational velocity of the polishing platen and the carrier and the polishing pressure,on the material removal rate of SiC crystal substrate（0001） Si and a（0001） C surface have been studied based on the alumina abrasive in chemical mechanical polishing（CMP）.The results proposed by our research here will provide a reference for developing the slurry,optimizing the process parameters,and investigating the material removal mechanism in the CMP of SiC crystal substrate.
基金
supported by the National Natural Science Foundation of China(No.51075125)
the Key Scientific Research Program of Economic and Social Development of Xinxiang City(No.S10004)
the Science and Technology Innovation Program of Henan Institute of Science and Technology
