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用于FEA场发射微尖表面的硅化物薄膜 被引量：1

The Silicide Film on the Surface of FEA's Emission Tips
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摘要 一些硅的化合物具有良好的场发射特性，如果用作FEA发射微尖表面的薄膜，将能较好地提高FEA的发射特性。本文对这一类硅化物的制作、测量与性能作了说明。 Some silicides are very good for the film on the surface of FEA' S emission tips, because of their good performance in field emission. They can improve the performanc e of FEA. The fabrication, measurement and performance of such silicides are described in this work.
作者 季旭东
机构地区 南京华东电子管厂
出处 《光电子技术》 CAS 2000年第2期111-115,共5页 Optoelectronic Technology
关键词 硅化物 FEA薄膜 场致发射 silicide, FEA, performance, film, field emission
分类号 TN304.055 [电子电信—物理电子学]
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参考文献4

  • 1[1]Silva S R P，Torrest R D，Sbannon J M et al．Electron field emission from amorphous silicon．IVMC’98，1998；285～286
  • 2[2]Williams N M，Christemsen A O，Cuomo J J et al．Field emission characteristics silicide(Cr3Si)and chromium sili cide-silicon oxide cermet on copper and Mo tips．IVMC’98，1998；293～294
  • 3[3]Yoon Young-joon，Kim Gi-bum，Chi Eung-joon et al．Effects of phase and thickness of cobalt silicide on field emission properties of silicon emitters．IVMC’98，1998； 314～315
  • 4[4]Lim Moo-sup，Park Cheal-min，Choi Yearn-lk et al．Investigation of field characteristics for Si-base materials:titanium silicide，poly-Si and single crystal Si，IVMC'98，1998；302～303

同被引文献15

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  • 4Jong Duk Lee, Byung Chang Shim, Byung-Gook Park. Silicide Application on Gated Single-Crystal, Polycrystalline and Amorphous Silicon FEAs-Part h Mo Silicide[J]. IEEE Transactions on Electron Devices, 2001,48 (1).
  • 5Rakhshandehroo M R and Pang S W. High Current Density Si Fieldemission Devices with Plasma Passivation and HfC Coating[J]. IEEETrans. Electron Devices,Apr. 1999,46:792-797.
  • 6Uh H S,Park B G and Lee J D. Improvement of Electron Emissionefficiency and Stability by Surface Application of Molybdenum Silicideonto Gated Poly-Si Field Emitters[J]. IEEE Electron Device Lett. , May 1998,19 : 167-170.
  • 7Jong Duk Lee, Byung Chang Shim, Byung-Gook Park. Silicide Application on Gated Single-Crystal, Polycrystalline and Amorphous Silicon FEAs-Part Ih Co Silicide[J]. IEEE Transactions on Electron Devices, 2001,48,1.
  • 8Chi E J, Shim J Y and Baik H K. Electrical Characteristics of Metalsilicide Field Emitters [C]//gth Int. Vac. Microelectron. Conf. , 1996, pp. 188-192.
  • 9Yoon Y J,Kim G B and Balk H K. Effects of Phase and Thicknessof Cobalt Silicide on Field Emission Properties of Silicon Emitters [J]. J Vac Sci. Technol. B, 1999,17(2) : 627-631.
  • 10Chung I J and Hariz A. Surface Application of Metal Silicides for Improved Electrical Properties of Field-Emitter Arrays [J]. Smart Mater. Struct, 6 (1997)633-639.

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光电子技术
2000年 第2期

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