软X射线发射光谱法研究过渡金属硅化物的价电子能带结构

Valence Band Density of States of Transition Metal Silicides Studied by Soft X-Ray Emission Spectroscopy

用软 X射线发射光谱法对 Mn Si、Mn Si1.7这两种组成的过渡金属锰硅化物的价电子能带构造进行了研究 .首先在硅表面上形成了 Mn Si、Mn Si1.7单一相薄膜 ,并用 X射线衍射谱得到证实 .然后测量了这两种锰硅化物的软 X射线发射光谱 Si- Kβ发射光谱和 Si- L2 ,3发射光谱 ,Si- Kβ发射光谱反映的是硅化物的价电子能带的 Si- p部分电子态密度 ,而 Si- L2 ,3发射光谱反映的是硅化物的价电子能带的 Si- s,d部分电子态密度 .Mn Si、Mn Si1.7的 Si- L2 ,3发射光谱具有不同的形状 .这些不同形状的原因 ,对比着这两种硅化物的晶体结构和价电子的能带结构进行了分析与讨论 .

Electronic states of the transition metal manganese silicides, with the composition being MnSi or MnSi 1.7 ,are investigated by soft X\|ray emission spectroscopy. The formation of MnSi and MnSi 1.7 with single phase is identified by X\|ray diffraction. Si\|K\-β and Si\|L 2,3 emission band spectra are measured, where the Si\|K\-β reflects the valence\|band density of states with p\|symmetry and the latter reflects the one with s\| and /or d\|symmetry. The spectrum of Si\|L 2,3 for MnSi 1.7 is different from that for MnSi. The origin of this difference has been discussed in comparison with those silicides.