IGBT数值模型建立及在三电平逆变电路的应用

IGBT Numerical Modeling and Application in Three-Level Inverter

采用PSpice仿真分析N沟道IGBT数值模型,该数值模型体现了MOSFET和双极型PNP晶体管特征。目前的许多仿真工具都很复杂,而且不能反映工作温度变化对器件参数的影响。本文参照测量和数据手册参数,提出了一种新颖、简捷的IGBT建模方法。根据FGW50N60HD型IGBT参数,建立该型号IGBT模型,并在三电平逆变电路中验证。该模型在外部温度环境变化时,容易修改模型的内部参数。仿真与实验结果证明了在不同温度条件下该模型的正确性。

The numerical model of N-Channel IGBT is analysed and simulated by PSpice. This numerical model can reflect the characteristic of MOSFET and PNP bipolar transistor. Most of the existing simulation means are complex, and the temperature characteristic is ignored. In this paper, a novel modeling method of IGBT is proposed by considering measurement and data sheet values. According to the parameters of IGBT for the type of FGW50N60HD, its IGBT model is established, which is further tested by the experiment in three-level inverter. Moreover, the internal parameters of IGBT model are easily modified according to the change of the outside temperature surroundings. Finally, the simulation and experimental results demonstrate the validities of the model in different temperature conditions.