摘要
该文根据蘑菇型电磁带隙(EBG)结构的等效电路原理提出一种插入交指电容的方法,实现扩宽蘑菇型EBG结构阻带宽度,并设计一种T型交指电容EBG结构验证该方法的有效性。-30 dB时该结构相对于蘑菇型EBG结构,阻带下截止频率从0.9 GHz降到290 MHz,带宽从6.1 GHz提高到7.1 GHz。在不改变EBG结构单元面积,并增加交指单元层数和降低单元厚度的情况下,通过仿真验证该方法可有效提高抑制同步开关噪声的能力。
According to the equivalent circuit of the mushroom^like Electromagnetic Band Gap (EBG) structure, a novel method of inserting the Inter-Digital Capacitor (IDC) to broaden the bandwidth of the stop-band is proposed in this paper. The T-shaped IDC EBG structure is designed to prove the correction and validity of the method. Compared with the mushroom-like EBG, the -30 dB stop-band of the proposed structure is broadened from 6.1 GHz to 7.1 GHz and the lower corner frequency is decreased from 0.9 GHz to 0.29 GHz. It is implemented by increasing the number of planes of IDC and decreasing the thickness of cell without changing the area of EBG cell. The results of the simulation show that the presented TIDC EBG is fit for Simultaneous Switching Noise (SSN) suppression.
出处
《电子与信息学报》
EI
CSCD
北大核心
2012年第10期2537-2540,共4页
Journal of Electronics & Information Technology
基金
国家自然科学基金(60876023)
重点实验室基金资助课题
关键词
电磁带隙
电源完整性
同步开关噪声
阻带
交指电容
Electromagnetic Band Gap (EBG)
Power integrity
Simultaneous Switching Noise (SSN)
Stop-band
Inter-Digital Capacitor (IDC)