微波等离子增强型PVD低温溅射SiGe(C)薄膜

Sputtering of SiGe(C) Films by ECR Plasma Assisted PVD at Low Temperature

利用微波-电子回旋共振等离子(ECR)增强型PVD设备,低温外延生长了SiGe(C)薄膜。对所制备样品的结晶性、表面形貌和成分与衬底温度、衬底偏置电压的关系进行了讨论,采用反射式高能电子衍射仪(RHEED)、原子力显微镜(AFM)和X射线衍射仪(XRD)对薄膜的晶体质量和表面形貌进行了分析。结果表明,用单靶制备Si(C)薄膜,在衬底温度为450℃时会得到质量较好的单晶薄膜。而利用双靶制备SiGe(C)薄膜,衬底温度为400℃、衬底偏置电压-15 V时会制备出更好的单晶薄膜。在衬底温度为400℃条件下,添加电流导入端子,在原有设备和衬底温度不变的条件下,当电流导入端子电压为-15 V时,制备的SiGe(C)单晶薄膜材料的AFM均方根粗糙度(Rrms)由原来的0.52 nm降低到0.41 nm。

The single crystal SiGe（C） films were fabricated by microwave-electron cyclotron resonance（ECR） plasma assisted PVD at low temperatures using the method of epitaxy.The relationships between the crystallinity,surface morphology,components of the prepared samples and the substrate temperature,substrate bias voltage were discussed.The crystal quality and surface morphology of the thin films were evaluated by reflection high-energy electron diffraction（RHEED）,atomic force microscope（AFM） and X-ray diffraction（XRD） technique.The results show that high qulity Si（C） crystal films can be obtained with a single target method at the temperature of 450 ℃.And SiGe（C） crystal films with higher qulity can be prepared with a dual target method at the temperature of 400 ℃ when the voltage of the electric-current-entrance pole is-15 V at the conditions of the original equipmerts and the substrate temperature.After adding the electric-current-entrance pole,the Rrms reduces from 0.52 nm to 0.41 nm.