基于磁致双折射的多频率隐身斗篷

Multi-Frequency Stealth Cloak Based on Magnetic Double Refraction

半导体在外磁场作用下,由于磁致双折射效应(Voigt效应),介电常数会发生改变.由此,提出了一种可由磁场调控的多频率隐身斗篷.理论和模拟的结果可以证明由高磁导率的锑化铟InSb制成的斗篷可以在多个频率下有效地减少系统总的散射截面.这些频率可以被外部控制,因为InSb的介电常数可以被外加磁场调控.这一研究可以提供一种潜在的设计多频率隐身斗篷的应用.

Owing to magneto birefringent effect （ Voigt effect） in an external magnetic field, the dielectric constant of a semiconductor will change. A magnetically controlled multi -frequency stealth cloak is suggested. Based on theoretical hypothesis and simulation, it is proved that the cloak made of high - index InSb material can significantly reduce the total scattering cross section of the cloaked system at multiple frequencies. These frequencies can be externally controlled since the dielectric constant of InSb can be well tuned by the external magnetic field. The result suggests a potential for designing a multi -frequency stealth cloak with considerable flexibility.