立方氮化硼(c-BN)薄膜生长特性研究

The grown character of cubic boron nitride thin films.

用射频等离子体增强热丝化学气相沉积 (RF- HFCVD)技术在 Si,Ni衬底表面合成了 c- BN膜 .实验结果表明 ,热丝温度、衬底温度等工艺参量及衬底材料的结构特性是影响 c- BN薄膜生长的主要因素 .

c\|BN thin films were synthesized on Si and Ni substrates using the RF plasma enhanced HFCVD method. The results show that depositing parameters ,such as filament temperature and substrate temperature,and structural preperities of substrate,have very important effects on the growth of c\|BN films.