摘要
开发了一种全新的等离子增强化学汽相淀积氧化硅和氮化硅薄膜制作技术，并首次将其成功地用于半导体功率器件芯片的钝化工艺，提高和保证了器件的性能和可靠性。
A new PECVD SiO2/Si3N4 technology was developed in the semiconductor devices passivating. These films are suitable materials for the power transistor passivating. The experiment demonstrated that it can improve and keep the devices characteristic and reliability.
出处
《半导体技术》
CAS
CSCD
北大核心
2000年第4期15-17,共3页
Semiconductor Technology
