摘要
研究了改变MESFET漏源电压大小和交换源漏电极对旁栅阈值电压的影响，并从理论上解释了与高场下衬底深能级EL2的碰撞电离关系。
In this paper the variation of the sidegating threshold voltage by varying the drainsource voltage and exchanging drain and source electrode are studied. And the variation which is closely related to the impact ionization of deep EL2 under high electric field are explained.
出处
《半导体技术》
CAS
CSCD
北大核心
2000年第4期28-30,共3页
Semiconductor Technology
基金
国家自然科学基金!69676003
关键词
旁栅效应
漏源电压
砷化镓
MESFET
Sidegating effect Drain-source voltage Exchange drain and source electrode Impact ionization of deep EL_2
