摘要
SiGe／SiHBT作为单片微波集成电路中的有源元件，在截止频率、增益、噪声等方面相对于GaAs器件有很大的优势。本文结合本单位在SiGe材料和器件、电路等方面做过的工作，对实现SiGe单片微波集成电路的一些理论和技术要点作了阐述。
Being the active component in the microwave IC, the SiGe/Si HBT has greater advantages in the cutoff frequency, current gain, and noise characteristics than the GaAs devices. We have done many works in this field, and then put forward some theories and essential technologies in the fabrication of the SiGe monolithic microwave integrated circuits.
出处
《半导体技术》
CAS
CSCD
北大核心
2000年第4期31-35,共5页
Semiconductor Technology
基金
国家高技术研究发展计划(863计划)项目!863-307-15-4(06)
