摘要
该文研究了真空磁过滤弧沉积方法制备的非晶金石薄膜 (a-DF)的电子场发射性能 ,SP2 键含量不同的薄膜的场发射性能有很大的差异 ,SP2 键含量越高 ,阈值电场越小 ,发射电流越大 ,同时失效率也较高。SP2 键含量为 6 .5% ,2 0 % ,40 %的薄膜 ,其阈值电场分别为2 .7V/ μm,1 .5V/ μm ,0 .7V/ μm ,远小于金属和硅尖锥的阈值电场。所有样品的发射点均为随机的点状分布。
Electron field emission character of amorphous diamond film (a-DF) deposited by FAD (Filtered arc deposition) technique with variant SP-2 content have been investigated. The experimental results show tha t with the increasing SP-2 content the turn-on field is decreased, but the fa ilure rate is increased too. The turn-on fields were 2.7V/μm, 1.5V/μm, and 0 .7V/μm for the samples with sp-2 content 6.5%, 20%, 40% respecively. Hypothes is has been proposed to interpret the effect of SP-2 content on field emission character of a-DF.
出处
《华东师范大学学报（自然科学版）》
CAS
CSCD
北大核心
2000年第2期45-48,共4页
Journal of East China Normal University(Natural Science)
基金
国家自然科学基金资助!(No.69671 0 1 1 )
关键词
非晶金刚石薄膜
SP^2键
场发射
FAD
amorphous diamond film (a-DF)
filtered are deposition (FAD)
SP-2 bond
field emission
