摘要
利用YAG脉冲激光器 (脉宽为 1 0ns ,波长为 1 .0 6μm)对砷注入长波碲镉汞样品进行激光退火 ,分析离子注入及激光退火引起的样品电学性质的变化 ;通过对电导率 -迁移率谱的研究 ,发现激光退火能够消除辐射损伤 ,并激活注入杂质 .
Arsenic implanted HgCdTe samples with long cutoff wavelength were annealed [CM(38]using the pulsed YAG laser irradiation me thod (pulse duration is 10ns, wavelength is 1.06μm). Experiments had been done to analysis the changes of electricity properties of the samples after implanted and annealed. The conductivity mobility spectrum was discussed. We thought that laser annealing could eliminate radiation damage and activate implant.
出处
《山东大学学报（自然科学版）》
CSCD
2000年第2期193-197,共5页
Journal of Shandong University(Natural Science Edition)
基金
山东省优秀中青年科学家奖励基金资助课题!( 980 2 )
