摘要
采用交流阻抗和白光电流测量法 ,研究了锑在恒电位 1.2V(VS .SCE)于 0 .0 2 5mol.dm- 3Na2 CO3+0 .0 2 5mol.dm- 3Na2 HCO3+0 .50 0mol.dm- 3Na2 SO4 (PH =9.98,30℃ )缓冲溶液中阳极形成膜半导体性质。实验证明 ,该阳极氧化膜是一种n -型半导体 ,其平带电位Efb和施主密度ND 分别为- 0 .53V(VS .SCE)和 2 .86× 10 18cm- 3。
The Semiconducting Properties of the anodic film on antimony in 0025mol.dm -3 NaHCO 3+0025mol.dm -3 Na 2CO 3+0500mol.dm -3 Na 2SO 4 Solution at 1.2V(VS.SCE) for 3h were investigated using the white photocurrent and ac impedance. The experimental results showed that the film is an n- type semiconductor. the flat—band potential of the film is -0.53V,while the donor density is 2.86×10cm -3 .
关键词
锑
阳极膜
平带电位
弱碱溶液
半导体性质
Antimony
Anodic oxide film
Flat—band potential
Donor density
M—S eq
