关于硅薄膜液相外延中氧化问题的若干讨论

Discussion of Oxidation in Silicon Film Grown by LPE Method

从热力学角度对 L PE中同时存在的 Si氧化与 Si O2 腐蚀的动态平衡过程进行了分析 ,表明在 Si的低温同质液相外延中 ,一般的 L PE条件很难解决防止 Si的氧化问题 .作者尝试采用饱和 Sn源保护 Si衬底的方法来解决硅氧化问题 ,通过对外延层表面形貌和成分的分析研究 ,表明采用 Sn源保护成功地解决了硅的氧化问题 .

Thermodynamic analysis of dynamic equilibrium between oxidation of silicon and etching of SiO 2 existing simultaneously in LPE, indicated that it would be very difficult to prevent the oxidation of Si by traditional LPE method. By a novel method, which used saturated Sn solution to protect Si substrate, the oxidation of Si was successfully prevented, which was shown from crystallinities and compositions of Si epitaxy layers.