低失能近轴背散射电子的蒙特卡罗模拟计算

Monte Carlo Simulation of Low Loss Energy and Coaxial Backscattered Electrons

基于低失能近轴背散射电子的新型分析扫描电子显微镜的 3个可调参数 :入射能量、探测能量和探测角 ,本文用蒙特卡罗方法模拟入射电子在被分析样品中的运动轨迹 ,分析和讨论了上述 3个参量对背散射率、原子序数衬度、形貌衬度、信噪比和分辨率等的影响 。

The new type of scanning electron microscope using the low loss energy and coaxial backscattered electrons has three parameters: primary energy, detection energy and detection angle. The Monte Carlo method has been used to simulate the incident electron trajectories in the target. We discuss the influence of these three parameters on backscattering coefficient, atomic number contrast, topographic contrast, signal to noise ratio and spatial resolution. The results show that the Monte Carlo simulations can guide the experimenter.