摘要
本文采用热压法制备了一种性能优良的Al-50Si合金电子封装材料。通过比较不同烧结工艺下烧结体的密度,获得了制备该合金的最佳烧结工艺:低温(460℃)压制压力100MPa、烧结温度800℃、烧结时间2h,热等静压工艺参数:温度540℃、压力200MPa,保温保压4h。对在最佳烧结工艺条件下,经过热等静压处理后的材料进行了性能表征,具体性能:相对密度达到99%,抗弯强度223MPa,硬度153HB,热膨胀系数在0~200℃达到9.3×10-6/K,热导率达到142W/(m.K)。
High-quality A1-50Si alloy electronic packaging materials were prepared by a hotpressing route. By comparison of the sintered density, the optimal sintering process is obtained: pressure of 100 MPa,the sintering temperature of 800℃, and the sintering time of 2 hours and HIP process is temperature of 540℃, pressure of 180 MPa and the time of 4 hours. Meanwhile, the properties of the material prepared under the optimal sintering process are relative density of 99%, bending strength of 223 MPa, hardness of 153 HB, and thermal expansion coefficient of 9.3×10^-6/K-1 in 0 - 200 ℃, the thermal conductivity of 142 W/(m · K). It indicates that A1-50Si alloy is a good candidate for electronic packaging materials.
出处
《粉末冶金工业》
CAS
北大核心
2012年第5期24-28,共5页
Powder Metallurgy Industry
基金
国家高技术研究发展计划(863计划)资助项目(2007AA03Z301)
国家重点基础研究发展规划(973计划)资助项目(2007CB9-36001)
国家自然科学基金资助项目(20771032)
国家教育部"新世纪优秀人才支持计划"资助项目(NCET-04-0561)
总装重点创新项目(7130703)
关键词
A1-SI合金
热压
电子封装
热导率
热膨胀系数
Al-Si alloy
hot pressing
electronic packaging
thermal conductivity
thermal expansion coefficient.