摘要
通过准分子 (30 8mm)激光将 (Ba1-xSrx)TiO3(BST)薄膜剥离沉积在Si(1 0 0 )基片上 .随着沉积温度的增加 ,BST薄膜的结晶性显著提高 .在 6 0 0℃附近沉积的BST薄膜 (40 0nm)有良好的结晶性 ,介电常数为30 0 ,损耗因子为 0 .0 1 5 ,漏电流密度达到 2× 1 0 -10 A/cm2 ,电荷存储密度QC 为 35fC/μm2 (外电场 1 2 .5kV/cm) .研究了MFS结构的C -V特性和I-V特性 ,BST/Si之间存在很好的界面 ,表现出良好的电性能 .
(Ba_(1-x)Sr_x)TiO_3 thin films have been deposited on Si(100) substrate by the excimer laser(308 nm) method. The crystallinity of the BST films abruptly increased with the deposition temperature increased, and the films have very good crystallinity at 600 ℃ with a dielectric constant of 300,a dissipation factor of 0.015, a leakege current density of 2×10 -10 A/cm 2,a charge storage density of 35 fC/μm 2 at an applied electric field of 12.5 kV/cm.
出处
《湖北大学学报（自然科学版）》
CAS
2000年第2期150-153,共4页
Journal of Hubei University：Natural Science
基金
华中理工大学激光技术国家重点开放实验室基金资助
关键词
介电常数
电性能
铁电薄膜
准分子激光沉积
(Ba_(1-x)Sr_x)TiO_3 thin film
DRAM
excimer laser
dielectric constant
