由离子注入引起的Cu_xS薄膜的状态变化

THE VARIATION OF Cu_xS THIN FILM BY IONS BEAM IMPLANTATION

讨论了 Cux S薄膜注入氮离子对薄膜特性的影响。铜硫化合物薄膜经两次蒸发制备在玻璃上。实验发现 ,氮离子束注入引起了 Cux S薄膜中铜与硫成分的改变 ,明显观察到样品中的铜对硫的比值随注入离子束强度的增加而变大。透射光谱分析对比证实确有新的 Cux S状态出现。

The implantation technique has been introducted to Cu xS thin films prepared by twice evaporation deposition nitrogen ions beam cause a variation of copper and sulfur composition in the Cu xS films.It is show that the radio of copper to sulfur in the sample is enhanced with intension of entering the Cu xS films.The comparison of optical transmission between original and implanted sample demonstrates a new phase to emerge.