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ESD保护低噪声放大器的分析与设计 被引量：3

Analysis and Design of Low Noise Amplifier with ESD Protection
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摘要 针对封装和ESD寄生对源极电感反馈结构低噪声放大器的影响,进行了详细的理论分析。在已发表文献的基础上,加入对ESD寄生引起的输入匹配网络改变的考虑,给出了新的噪声系数公式。根据分析结果,提出设计时的考虑。采用0.18μm CMOS工艺,设计了一款GPS L1波段的单端低噪声放大器。测试结果显示,电路增益达到18dB,噪声系数为2.2dB;在1.8V电压下,电流消耗为4.5mA。 Effects of parasitics of package and ESD devices on inductively degenerated low-noise amplifier were analyzed in detail. Based on published works, change of input matching networks due to parasitics of ESD devices was taken into considerations, and a new noise figure formula was presented. Based on the analysis and formula, design considerations were proposed. An LNA with ESD protection for GPS L1 band was designed using 0.18 t^m CMOS process. Measurement made on the packaged device showed that the LNA had a gain of 18 dB and an NF down to 2.2 dB. The circuit consumed 4.5 mA of current from 1.8 V supply.
作者 段炼 黄伟 马成炎 叶甜春
机构地区 中国科学院微电子研究所 杭州中科微电子有限公司
出处 《微电子学》 CAS CSCD 北大核心 2012年第5期613-616,621,共5页 Microelectronics
基金 核高基重大专项(2009ZX01031-002-008)
关键词 GPS接收机 低噪声放大器 ESD保护 GPS receiver Low noise amplifier ESD protection
分类号 TN732 [电子电信—电路与系统]
  • 相关文献

参考文献6

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二级参考文献18

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共引文献2

同被引文献16

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引证文献3

二级引证文献2

微电子学
2012年 第5期

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