摘要
研究了低压沟槽功率MOSFET(<100V)在不同耐压下导通电阻最优化设计的差别。给出了确定不同耐压MOSFET参数的方法,简要分析了沟槽MOSFET的导通电阻;利用Sentaurus软件对器件的电性能进行模拟仿真。理论和仿真结果均表明,耐压高的沟槽MOSFET的导通电阻比耐压低的沟槽MOSFET更接近理想导通电阻,并且,最优导通电阻和最优沟槽宽度随着耐压的提高而逐渐增大。
The differences of optimized on-resistance for low voltage trench power MOSFET（100 V） was studied at different breakdown voltages.Methods to determine parameters of MOSFETs with different breakdown voltages were described,and on-resistance of trench power MOSFET was analyzed.Electrical performance of the device was simulated using Sentaurus.Both theory and simulation results showed that on-resistance of trench MOSFET with higher breakdown voltage was closer to ideal on-resistance,compared with trench MOSFET with lower breakdown voltage,and that optimal on-resistance and trench width increased gradually with increasing breakdown voltage.
出处
《微电子学》
CAS
CSCD
北大核心
2012年第5期725-728,732,共5页
Microelectronics
基金
国家自然科学基金重大项目(60990320
60990323)
国家高技术研究发展(863)计划基金资助项目(2012AA012305)
