摘要
主要对InP/InGaAs异质结进行数值仿真。考虑到异质结界面存在导带不连续和价带不连续,在流体动力学模型的基础上,采用热电子发射模型和隧穿模型,对异质结的直流特性进行仿真。结果表明,热电子发射效应和隧穿效应对异质结界面载流子的输运有很大影响。仿真结果与实验结果基本一致。
Numerical simulation was made on InP/InGaAs heterojunction.Considering discontinuity of the conduction band and valence band at heterojunction interface,and based on hydrodynamic model,thermionic emission model and tunneling model were used to simulate DC characteristics of heterojunctions.It has been shown that both thermionic emission model and tunneling model had significant effect on transportation of carriers,which was in good agreement with experimental data.
出处
《微电子学》
CAS
CSCD
北大核心
2012年第5期733-736,共4页
Microelectronics
基金
国家重点基础研究发展计划基金资助项目(2010CB327505)
关键词
流体动力学
热电子发射
隧穿
异质结
Hydrodynamic
Thermionic emission
Tunneling
Heterojunction
