电感耦合等离子体原子发射光谱法测定硅铁中的痕量硼

Measurement of Trace Boron in Ferrosilicon with Inductive Coupled Plasma Atomic Emission Spectrometry

研究了硅铁中硼元素的电感耦合等离子体原子发射光谱分析方法。该方法采用硝酸和氢氟酸在低温条件下分解试样,配合电感耦合等离子体原子发射光谱仪测定硅铁中硼元素含量。光谱仪的进样系统采用耐氢氟酸的进样系统。在配制标准曲线过程中,考虑基体匹配和酸度对分析结果的影响。在仪器分析条件优化方面,通过试验确定基体元素对分析元素的基体影响和谱线干扰效应,选用波长208.959nm谱线作为分析谱线。该分析方法的精密度(RSD)小于5%,快速、简便,分析结果准确,可满足硅铁中痕量硼的检验要求。

The paper studies Inductive Coupled Plasma Atomic Emission Spectrometry for measuring boron element in ferrosilicon that hydrogen nitrate and hydrofluoric acid decompose the sample under low temperature so as to enable the spectrometer to determine boron element. The sampling system of spectrometer is hydrofluoric acid resistant. The influence of base matching and acidity on analysis result is considered in plotting standard curve process. The base influence and spectral line interference effect of base element on analyzed element is concluded by test and spectral line with a wavelength of 208.959 nm is chosen as analysis line. This analysis method, simple, rapid and accurate, with <5% precision, can meet the inspection requirement of trace boron in ferrosilicon.