摘要
根据GaAs材料的能带模型和能带特点,对激光脉冲作用下GaAs中非平衡载流子浓度及其微观驰豫过程进行研究.相位驰豫的主要散射机制为载流子—载流子散射,散射时间为几十个fs;准热平衡驰豫主要为载流子—声子散射,散射时间大约为ps量级,非平衡载流子浓度及其光电特性主要决定于复合过程.
By using energy model and its energy features,the Non-equilibrium carriers concentration of the GaAs material of laser pulses and their microscopic relaxation process were researched.The main scattering mechanism of phase relaxation is carrier-carrier scattering and the scattering time for dozens fs;quasi-thermal equilibrium relaxation is the main carrier-phonon scattering and its scattering time is about the ps orders of magnitude,the concentration of non-equilibrium carriers and their photoelectric properties are mainly determined by the composite process of non-equilibrium carriers.
出处
《渭南师范学院学报》
2012年第10期32-36,共5页
Journal of Weinan Normal University
基金
陕西省教育厅专项科研计划项目(12JK0989)
渭南师范学院科研计划项目(12YKF017)
关键词
热激发
GAAS
非平衡载流子
弛豫
thermal excitation
GaAs
non-equilibrium carrier
relaxation
