热处理温度和溅射气压对铜薄膜结构和性能影响的研究

Influence of heat treatment temperature and sputtering pressure on structure and property of Cu films

采用射频磁控溅射镀膜法,在不同溅射气压、不同热处理温度下制备了铜薄膜,并利用扫描电镜(SEM)和X射线衍射(XRD)研究了溅射气压和热处理温度对铜薄膜结构和性能的影响。结果表明:热处理前铜薄膜的晶粒尺寸较小且大小分布不均;随着热处理温度的提高,薄膜的晶粒尺寸逐渐增大,表面更加平坦化,而晶粒之间的缝隙呈现先增大再减小后增大的趋势,在400℃时晶粒排列最紧密,表面最平坦;随着溅射气压的增高,铜(111)峰值呈现先增大后减小的趋势,当溅射气压为1.0Pa时铜的抗电迁移性最强。

By adopting RF magnetron sputtering method, Cu films have been made in different sputtering pressure and heat treatment temperature and on the basis of silicon. The influence of sputtering pressure and heat treatment temperature on the structure and property of the Cu films has been studied by use of SEM and XRD technique. It is found out that grain size of Cu films is smaller and uneven distribution before heat treatment. With the increase of heat treatment temperature, the surface changes to be more smooth, but the gaps between grain become bigger and then smaller and then bigger. The grain arrangement is most close and the surface is the smoothest when the temperature is 400℃. With the increase of sputtering pressure, Cu （111） peak becomes bigger and then smaller. The electromigration resistance of Cu is the strongest when the sputtering pressure is 1.0 Pa.