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Digital wavelength switching by thermal and carrier injection effects in V-coupled cavity semiconductor laser

Digital wavelength switching by thermal and carrier injection effects in V-coupled cavity semiconductor laser
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摘要 Consecutive wavelength switching characteristics of a simple, compact, and digitally wavelength-switchable laser based on V-coupled cavities are reported. Wavelength switching through thermal and carrier injection effects is examined. Without using band gap engineering for the tuning section, 26- and 9-channel wavelength switching schemes are achieved via thermal and carrier injection effects, respectively. The performances of these two tuning schemes are then compared. Consecutive wavelength switching characteristics of a simple, compact, and digitally wavelength-switchable laser based on V-coupled cavities are reported. Wavelength switching through thermal and carrier injection effects is examined. Without using band gap engineering for the tuning section, 26- and 9-channel wavelength switching schemes are achieved via thermal and carrier injection effects, respectively. The performances of these two tuning schemes are then compared.
出处 《Chinese Optics Letters》 SCIE EI CAS CSCD 2012年第10期71-74,共4页 中国光学快报(英文版)
基金 supported by the National Natural Science Foundation of China (No. 60788403) the Natural Science Foundation of Zhejiang Province (No. Z1110276)
关键词 LASERS Semiconductor lasers SWITCHING Lasers Semiconductor lasers Switching
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