不同氧源对原子层沉积ZnO薄膜的性能影响

Influence of Oxidant Source on Properties of ZnO Films Deposited by Atomic Layer Deposition

采用原子层沉积方法(ALD)分别以H2O、H2O2和O3为氧源制备ZnO薄膜,研究不同氧源对ZnO薄膜生长速率、成分、晶体结构及电学性能的影响。结果表明,采用不同氧源均能实现ZnO薄膜的ALD自限制生长,所制备ZnO薄膜均具有垂直于衬底表面的c轴择优取向。与采用H2O2和H2O为氧源制备的ZnO薄膜相比,XRD和XPS测试证实O3为氧源制备薄膜的晶体质量和Zn/O原子较高;相应的Hall测试表明其电阻率最低为0.053Ω.cm,此时载流子浓度为4.8×1018cm-3,Hall迁移率为24.5 cm2/Vs。

ZnO films were successfully deposited by atomic layer deposition （ALD） using H2O, H2O2 and O3 as oxidant source, respectively. The influences of oxidant source on films growth rate, composition, structural and electrical properties of ZnO films were investigated. ZnO film self-limiting growth behavior was achieved by ALD using different oxidant source. All the films exhibit a highly preferential c-axis orientation. Compared with H2O or H2O2, a minimum resistivity of 0.053 Ω. cm, with a cartier concentration of 4.8×10^18cm^-3 and a Hall mobility of 24.5 cm2/Vs, are obtained for ZnO film prepared with O3 as oxidant source. The increase of conductivity with O3 as oxidant source can contribute to the better crystalline quality and higher Zn/O ratio as proved by XRD and XPS.