摘要
在低温下观察到P型CuInSe_2薄膜的瞬态光电导现象,并进行了理论和实验研究。认为该现象是由陷阱引起的光电导衰减使陷阱位垒妨碍光生电子和空穴的复合,通过隧道效应实现了光生电子和空穴的复合。理论与实验结果一致。
The transient photoconduotivity (TPC) in P-type OuInSe_2 thin film is observed at low temperature and studied both experimentally and theoretically. The effectis shown as a decay of the photoconductivity, whioh is caused by the traps whose potential barrier hinders the recombination of the photoexcited electrons and holes and can be theoretically described as tunneling-assisted recombination. The theoretical result is in good agreement with the experimental one.
出处
《红外研究》
CSCD
北大核心
1990年第3期227-232,共6页
