摘要
金属有机气相沉积法(MOCVD)已受到国内外普遍重视,MOCVD技术所用的关键原材料也已研制成功。近年来,国内采用MOCVD技术在GaAs衬底上已生长出GaAlAs、HgCdTe、ZnSe等异质结材料,以InP、CaF_2作衬底,也生长了某些半导体薄膜材料。
MOCVD process is highly valued both at home and abroad. Raw materials of paramount importance for the process are successfully developed. During the last few years, some heterogeneous materials such as GaAlAs, HgCdTe and ZnSe have been grown on GaAs substrate and some semiconducting thin films have also been grown on InP and CaF_2 substrates.
