摘要
本文报道了用CVD法沉积非晶硅太阳电池用绒面FTO(SnO_2掺F)透明导电膜的工艺研究,较深入地讨论了FTO膜的导电机理、光学性质和薄膜生长中各参数对表面织构度的影响,总结出最佳工艺条件。在此条件下,在较大的玻璃衬底上长出了R_□～5.5Ω/□、总透过率～80％、漫射透过率T_d～5％(6000—7000埃范围)的绒面FTO膜。
In this paper, the technological process of textured FTO (SnO2 doped with F) film as a transparent electrode of a-Si cells prepared by CVD method is reported. The mechanism of electrical conductivity, optical properties of textured FTO film as well as the effects of surface roughness are discussed and the optimization of preparation process is also conducted. Under optimum condition, the textured FTO film on large area can be produced with the sheet resistance of about 5.5Ω/□ , the transmittance of about 80% and diffuse scattering transmittance about 5% (6000A-7000A).
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
1990年第2期122-133,共12页
Acta Energiae Solaris Sinica
关键词
非晶硅太阳电池
薄膜
FTO膜
导电膜
Electrodes
Fluorine
Applications
Oxides
Chemical Vapor Deposition
Solar Cells
Silicon
