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Direct band gap luminescence from Ge on Si pin diodes 被引量:1

Direct band gap luminescence from Ge on Si pin diodes
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摘要 Germanium (Ge) pin photodiodes show clear direct band gap emission at room temperature, as grown on bulk silicon in both photoluminescence (PL) and electro- luminescence (EL). PL stems from the top contact layer with highly doped Ge because of strong absorption of visible laser light excitation (532 nm). EL stems from the recombination of injected carriers in the undoped intrinsic layer. The difference in peak positions for PL (0.73 eV) and EL (0.80 eV) is explained by band gap narrowing from high doping in n+-top layer. A superlinear increase of EL with current density is explained by a rising ratio of direct/ indirect electron densities when quasi Fermi energy level rises into the conduction band. An analytical model for the direct/indirect electron density ratio is given using simplifying assumptions. Germanium (Ge) pin photodiodes show clear direct band gap emission at room temperature, as grown on bulk silicon in both photoluminescence (PL) and electro- luminescence (EL). PL stems from the top contact layer with highly doped Ge because of strong absorption of visible laser light excitation (532 nm). EL stems from the recombination of injected carriers in the undoped intrinsic layer. The difference in peak positions for PL (0.73 eV) and EL (0.80 eV) is explained by band gap narrowing from high doping in n+-top layer. A superlinear increase of EL with current density is explained by a rising ratio of direct/ indirect electron densities when quasi Fermi energy level rises into the conduction band. An analytical model for the direct/indirect electron density ratio is given using simplifying assumptions.
出处 《Frontiers of Optoelectronics》 2012年第3期256-260,共5页 光电子前沿(英文版)
关键词 photoluminescence (PL) electroluminescence(EL) germanium (Ge) direct band gap photoluminescence (PL), electroluminescence(EL), germanium (Ge), direct band gap
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