摘要
在这篇文章，我们用转移矩阵方法(TMM ) 基于设备机制和搬运人率方程计算了并且当模特儿 In0.53Ga0.47As/InP 雪崩光电二极管(APD ) 的获得。事实上，一个分布式的模型为计算影响电离(I2 ) 并且联系增加区域的不同的节被介绍。在这个建议模型，后退的方程被使用，并且设备获得被认为比例到产量光电子和光穴的数字。由有在文学可得到的试验性的数据的模仿的结果的比较，它被表明了是的发达模型的能力为模仿 APD 行为并且解释他们的试验性地测量的特征的一个强大的工具。
In this article, we calculated and modeled the gain of Ino.53Gao.47As/[nP avalanche photodiode （APD） based on a device mechanism and carrier rate equations using transfer matrix method （TMM）. In fact, a distributed model was presented for calculating impact ionization （I2） and relating different sections of the multiplication region. In this proposed model, recessive equations were used, and device gain is considered proportional to the number of output photo-electrons and photo-holes. By comparison of simulated results with experimental data available in literature, it has been demonstrated the capability of the developed model as a powerful tool for simulating APDs＇ behavior and interpreting their experimentally measured characteristics.
