梯度α-Ta(N)/TaN双层阻挡层的制备及性能表征

Preparation and Properties Characterization of Gradient α-Ta(N)/TaN Bi-layer Diffusion Barrier

提出了一种梯度氮化法制备出低阻、高稳定性的α-Ta(N)/TaN双层Cu扩散阻挡层。该方法有效地避免了异质元素的引入和高N含量导致的高电阻率。用四点探针(FPP)、X射线衍射(XRD)、高分辨透射电子显微镜(HRTEM)进行薄膜电性能和结构的表征。分析结果表明,梯度氮化工艺能调控金属Ta膜的相结构和金属Ta中的N原子浓度,从而获得低阻α-Ta(N)/TaN双层Cu扩散阻挡层结构。600高温老化退火的实验结果进一步证明此结构具有高的热稳定性。

An ultra-low nitrogen atmosphere strategy of magnetron sputtering deposition with dynamic regulation of sputtering atmosphere was developed to prepare gradient α-Ta（N）/TaN bi-layer films,which have lower resistivity and high thermal stabilization.This deposition method can avoid effectively the high resistivity of bi-layer barrier films resulted from the N integration and the introduction of heterogeneous elements for the transformation of α-Ta phase.X-ray diffraction spectra（XRD）,Four-point probe（FPP） measurement and Transmission electron microscopy（TEM） were used for characterization of the film microstructure.The results show that the as-deposited gradient α-Ta（N）/TaN bi-layer films have lower resistivity and good crystallinity,and the gradient α-Ta（N）/TaN bi-layer films have good structure stability even annealed at 600 ℃ for 60 min in vacuum.